smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features integrated temperature sensor electrostatic discharge protection q101 compliant standard level compatible. absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 75 v drain-gate voltage v dgr 75 v gate-source voltage v gs 20 v drain current (dc) t mb =25 ,v gs =10v i d 120 a drain current (dc) t mb = 100 ,v gs =10v i d 75 a drain current (pulse peak value) *1 i dm 480 a total power dissipation t mb =25 p tot 272 w gate-source clamping current (continuous) 10 ma gate-source clamping current *3 50 ma storage & operating temperature t stg ,t j -55to175 120 a 75 a pulsed reverse drain current *1 i drm 480 a non-repetitive avalanche energy *2 e ds(al)s 739 j electrostatic discharge voltage; all pins *4 v esd 6kv thermal resistance junction to mounting base r th j-mb 0.55 k/w thermal resistance junction to ambient r th j-a 50 k/w *1tmb=25 ; pulsed; tp 10 s; *2 unclamped inductive load; i d =75a;v ds 75 v; v gs =10v;r gs = 50;starting tj = 25 *3 tp = 5 ms; =0.01 *4 human body model; c = 100 pf;r = 1.5 k i dr reverse drain current (dc) t mb =25 i gs(cl) KUK7109-75AIE 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i d =0.25ma;v gs =0v;t j =25 75 v i d =0.25ma;v gs =0v;t j =-55 70 v i d =1ma;v ds =v gs ;t j =25 234v i d =1ma;v ds =v gs ;t j = 175 1v i d =1ma;v ds =v gs ;t j =-55 4.4 v v ds =75v;v gs =0v;t j =25 0.1 10 a v ds =75v;v gs =0v;t j =175 250 a gate-source breakdown voltage v (br)gss i g = 1ma;-55 t j 175 20 22 v gs = 10 v; v ds =0v;tj=25 22 1000 na v gs = 10 v; v ds =0v;tj=175 10 a v gs =10v;i d =50a;tj=25 .89 m v gs =10v;i d =50a;t j =175 19 m ratio of drain current to sense current i d /i sense v gs >10v;-55 t j 175 450 500 550 total gate charge q g(tot) 121 nc gate-to-source charge q gs 20 nc gate-to-drain (miller) charge q gd 44 nc input capacitance c iss 4700 pf output capacitance c oss 800 pf reverse transfer capacitance c rss 455 pf turn-on delay time t d(on) 35 ns rise time t r 108 ns turn-off delay time t d(off) 185 ns fall time t f 100 ns internal drain inductance l d measured from upper edge of drain mounting base to center of die 2.5 nh internal source inductance l s measured from source lead to source bond pad 7.5 nh source-drain (diode forward) voltage v sd i s =25a;v gs = 0 v 0.85 1.2 v reverse recovery time t rr i s =20a;-d if /d t = -100 a/s; 75 ns recovered charge q r v gs =-10v;v ds =30v 270 nc v dd =30v;r l =1.2;v gs =10v;r g = 10 r dson drain-source on-state resistance zero gate voltage drain current i dss v gs =10v;v dd =60v;i d =25a gate-source leakage current i gss v gs =0v;v ds =25v;f=1mhz drain-source breakdown voltage v (br)dss v gs(th) gate-source threshold voltage 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors KUK7109-75AIE smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
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